Hot-Carrier Degradation and Electric Field and Electron Concentration near Drain Junction in Low-Temparature N-Channel SD and LDD Poly-Si TFTs

ENG

G.Usami_ Y.Nogami_ T.Yajima_ M.Yamagata_ T.Satoh_ H.Tango

2007-03

JJAP

Vol.46_ No.3B

pp. 1322-1327

2006